"Experimental Analysis of Two Measurement Techniques to Characterize Photodiode Linearity"

Abstract

As photodiodes become more linear, accurately characterizing their linearity becomes very challenging. We compare the IMD3 results from a standard two tone measurement to those from a more complex three tone measurement technique. A Ge n-i-p waveguide photodetector on
Silicon-on-Insulator (SOI) substrate is used for the comparison.  Additionally, we analyze, via simulation, the limitations of the measurement system in determining the distortion of highly linear photodiodes.

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