Jonathan Doylend earned a B.Sc. (Honours Physics) from the University of Waterloo, Waterloo, Canada in 2001 and Ph.D. (Engineering Physics) from McMaster University, Hamilton, Canada in 2011. He also holds a B.A. (Liberal Arts) from Thomas Aquinas College, California (1996).
In his Ph.D. thesis "Defect-mediated photodetectors for silicon photonic circuits" he demonstrated integrated attenuation control and monitoring, dynamic channel leveling, and tunable resonant detection at telecom wavelengths in monolithic silicon devices and characterized the mechanism and photoionization cross-section associated with the dominant carrier-generation process in silicon ion-implanted waveguide photodetectors. He received the Ontario Graduate Scholarship and the NSERC Alexander Graham Bell Canada Graduate Scholarship for his Ph.D. work.
He has also worked at the Electrooptic Products Division of JDS Uniphase (primary project: integrated tap monitors in lithium niobate modulators) and at Phiar Corporation (primary project: time and frequency domain characterization of tunnel-junction photodiodes) prior to his graduate studies, and completed an internship with the Photonics Technology Lab at Intel Corporation (project: design and characterization of tunable silicon ring resonators) during his graduate studies.
He is currently a Postdoctoral researcher with the Optoelectronics Research Group headed by John Bowers at UCSB and holds an NSERC Postdoctoral Fellowship. His primary research interest is optoelectronics and its application to computing.