Research

Silicon Photonics

Silicon photonics has the potential to create low-cost, high-volume and reliable integrated circuits due to its compatibility with mature CMOS fabrication technology. Our hybrid silicon platform integrates active optical components on a silicon chip by coupling light evanescently from a waveguide to a bonded III/V layer.

Our research is focused on but not limited to these areas:

Lasers

Using III-V material for optical gain and silicon substrate for waveguiding, single frequency, and tunable lasers targeted at optical interconnect applications are designed and integrated with other components

Modulators

Developing ultrahigh-speed, high modulation efficiency, low footprint and low power consumption modulators on silicon substrate

PICs

Developing high efficiency, high-speed free-space beam controllers with integrated amplification, phase control, and feedback on a silicon substrate

Photodetectors

Works on making faster, higher-output power photodetectors on silicon

Ultra-low-loss Waveguides

Silica-based planar waveguides with propagation losses 2 to 4 orders of magnitude lower than those in passive semiconductor waveguides allow us to meet the performance demands of more applications with integration on a silicon substrate

 

Energy Efficiency

The field of energy efficiency spans many disciplines and has become increasingly important due to the overwhelming growth of global energy use. The Center for Energy Efficient Materials (CEEM) at UC Santa Barbara is organized to address fundamental issues regarding energy efficiency from a science and engineering perspective. Our group investigates novel devices and materials for both waste heat recovery and energy production within CEEM.

Our research is focused on but not limited to these areas:

Thermoelectrics

Design nanostructured materials that enable independent control and optimization of thermal and electrical properties. Research is divided into two efforts: embedded rare earth nanoparticles and nanowires in a III-V matrix and nanostructured silicon materials.

Photovoltaics

Design and combine various III-V materials into multi-junction devices using wafer bonding techniques to increase efficiency and performance. Design and fabricate advanced ultra-broadband anti-reflection coatings suitable for multi-junction devices with four or more junctions.

 

Growth of III/V on Silicon

Growth of high quality III/V materials directly on Silicon would further reduce the cost of active optoelectronic integrated devices. Our investigations are focused on optimizing the quality of epitaxial lateral overgrown (ELO) InP on Silicon using metal organic chemical vapor deposition (MOCVD).