1.3 µm quantum-dot distributed feedback lasers directly grown on (001) Si

This paper presents a path towards high-volume, low-cost transceivers that should revolutionize the datacom market by developing a simple, high-yield process for fabricating QD based single frequency lasers. The four big changes from the approach taken today are 1) Growth on Si, 2) MBE growth and MBE regrowth which is possible to be implemented at 300 mm wafer scale, 3) System demonstration without optical isolators and 4) demonstration of a path to PICs for Terabit transmitters.