Hertz-level-linewidth semiconductor laser via injection locking to an ultra-high Q silicon nitride microresonator

Author(s)
W. Jin, , Q. Yang, , L. Chang, B. Shen, H. Wang , M. A. Leal, L. Wu, M. Gao, A. Feshali , M. Paniccia , K. J. Vahala, J. E. Bowers
Publication Image
Ring resonator thumbnail
Publication Date
Publication Type
Conference
Journal/Conference Name
CLEO: Science and Innovations
Indexing
SM1A.2

A conventional semiconductor DFB laser is self-injection-locked to a CMOS-foundryfabricated ultra-high Q silicon nitride microresonator, suppressing high-offset frequency noise to 0.2 Hz2 Hz-1 and yielding instantaneous linewidth of 1.2 Hz.

Publication File
CLEO_SI-2021-SM1A.2.pdf1.27 MB
Related Profiles
Warren Jin
Lin Chang
John Bowers
Research Areas
Photonics Integrated Circuits