UCSB and HKUST demonstrated the integration of quantum dot lasers and photodetectors on silicon substrates. An ultra-low dark current of 0.8 nA and an internal responsivity of 0.9 A/W were measured in the O band.
Silicon photonic integration is an enabling technology for power- and cost-effective optical interconnects in exascale performance computers and datacenters which require extremely low power consumption and dense integration for a higher interface bandwidth density. In this paper, we experimentally demonstrate a fully integrated optical transceiver network on a silicon substrate using heterogeneous integration. High performance on-chip lasers, modulators and photodetectors are enabled by transferring III-V materials to a pre-patterned silicon substrate.