Optoelectronics Research Group

Only a few decades ago, finding a particular channel on the radio or television meant dialing a knob by hand, making small tweaks and adjustments to hone in on the right signal. Of course, we now take such fine tuning for granted, simply pressing…

We investigate the impact of threading dislocation density on the reliability of 1.3 lm InAs quantum dot lasers epitaxially grown on Si. A reduction in the threading dislocation density from 2.8108 cm2 to 7.3106 cm2 has improved the laser…

The first single-section quantum dot mode-locked laser directly grown on a CMOS-compatible silicon substrate has been produced by researchers in the US. Their achievement could open the door to much lower complexity, cheaper laser sources for…

Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and scalability advantages over heterogeneous integration. The challenge is that epitaxial growth introduces high densities of crystalline defects that…

Lithium niobate on insulator (LNOI) technology is revolutionizing the lithium niobate industry, enabling higher performance, lower cost and entirely new devices and applications. The availability of LNOI wafers has sparked significant interest in…

Low-loss arrayed waveguide gratings (AWGs) are demonstrated at a 2.0-μm wavelength. These devices promote rapidly developing photonic applications, supported by the recent development of mid-infrared lasers integrated on silicon (Si). Multi-…

Abstract—We design, fabricate, and characterize ultra-low loss continuously tunable optical true time delay devices based on Si3N4 ring resonators in a side-coupled integrated spaced sequence of resonators (SCISSOR) structure. A large tunable…

Important advances: 

1. Record low threshold current density for growth on (100) Si: 198 A/cm^2 
2. Record low threshold current for any F-P laser grown on Si
3. Record high injection efficiency: 87%
4. Record long…

Silicon photonic integration is an enabling technology for power- and cost-effective optical interconnects in exascale performance computers and datacenters which require extremely low power consumption and dense integration for a higher…

We demonstrate integrated optical isolators with broadband behavior for the standard silicon-on-insulator platform. We achieve over 20 dB of optical isolation across 18 nm of optical bandwidth. The isolator is completely electrically controlled…

We demonstrate a technique to precisely control and stabilize the beat frequency of a photonic microwave signal generator based on beating the optical signals of two lasers on a high-speed photodetector. The approach does not require high-speed…

We report 1300 nm continuous wave lasing on an on-axis GaP/Si (001) virtual substrate operating up to 60°C with record low threshold current of 27 mA. Ridge and broad area lasers were fabricated with seven layers of p-modulation doped quantum…

We demonstrate the first interband cascade lasers heterogeneously integrated with silicon waveguides. The 3.6 μm wavelength lasers operate in pulsed mode at room temperature, with threshold currents as low as 394 mA.

As a result of record low threading dislocation densities, the threshold current and threshold current density have gone down in our Quantum Dot lasers, and we see record high wallplug efficiencies for any laser on silicon.

The cover of the latest issue of Optica shows the latest quantum dot microring lasers on silicon with record low lasing thresholds.  This is promising for next generation data center interconnects.