Home

Sub-kHz linewidth Extended-DBR lasers heterogeneously integrated on silicon by D. Huang, M. A. Tran, J. Guo, J. Peters, T. Komljenovic, A. Malik, P. A. Morton, J. E. Bowers. 

We demonstrate single-mode E-DBR lasers with 1kHz linewidth and…

Abstract: Multi-spectral midwave-infrared (mid-IR) lasers are demonstrated by directly bonding quantum cascade epitaxial gain layers to silicon-on-insulator (SOI) waveguides with arrayed waveguide grating (AWG) multiplexers. Arrays of distributed…

In this contribution, we demonstrate the first integrated gallium arsenide (GaAs) ring resonator for second harmonic generation (SHG) on a GaAs-on-insulator platform. Such resonators exhibit high nonlinear optical coefficients, a strong optical…

A new invited review paper on heterogeneous integration of III-V semiconductor photonics combined with silicon foundry technology has just been published in IEEE Journal of Selected Topics in Quantum Electronics.

"Heterogeneous…

Here we demonstrate an 8x4 multi-wavelength selective ring resonator based crossbar switch matrix implemented in a 220-nm silicon photonics foundry for interconnecting electronic packet switches in scalable data centers. This switch design can…

Low-cost, small-footprint, highly efficient, and mass-producible on-chip wavelength-division-multiplexing (WDM) light sources are key components in future silicon electronic and photonic integrated circuits (EPICs), which can fulfill the rapidly…

Multi-spectral midwave-infrared (mid-IR) lasers are demonstrated by directly bonding quantum cascade epitaxial gain layers to silicon-on-insulator (SOI) waveguides with arrayed waveguide grating (AWG) multiplexers. Arrays of distributed feedback…

Optical isolators and circulators are extremely valuable components to have in photonic integrated circuits, but their integration with lasers poses significant design and fabrication challenges. These challenges largely stem from the…

We present a brief overview of the various leading platforms for photonic integration. Subsequently, we consider the possibility of a photonic integrated circuit platform utilizing epitaxially grown III–V material on silicon—without the need for…

Microring lasers feature ultralow thresholds and inherent wavelength-division multiplexing functionalities, offering an attractive approach to miniaturizing photonics in a compact area. Here, we present static and dynamic properties of microring…

1.3 μm InAs quantum dot lasers on Si show a CW threshold current of 4.8 mA and extrapolated lifetimes of ten million hours at 35 °C and ~65,000 hours at 60 °C.

Intel has won SEMI’s 2018 Award for the Americas. SEMI honored the celebrated chipmaker for pioneering process and integration breakthroughs that enabled the first high-volume Integrated Silicon Photonics Transceiver. The award was presented…

This work reports on the ultra-low linewidth enhancement factor (aH-factor) of semiconductor quantum dot lasers epitaxially grown on silicon. Owing to the low density of threading dislocations and resultant high gain, an aH value of 0.13 that is…

Only a few decades ago, finding a particular channel on the radio or television meant dialing a knob by hand, making small tweaks and adjustments to hone in on the right signal. Of course, we now take such fine tuning for granted, simply pressing…

We investigate the impact of threading dislocation density on the reliability of 1.3 lm InAs quantum dot lasers epitaxially grown on Si. A reduction in the threading dislocation density from 2.8108 cm2 to 7.3106 cm2 has improved the laser…