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Optical isolators and circulators are extremely valuable components to have in photonic integrated circuits, but their integration with lasers poses significant design and fabrication challenges. These challenges largely stem from the…

We present a brief overview of the various leading platforms for photonic integration. Subsequently, we consider the possibility of a photonic integrated circuit platform utilizing epitaxially grown III–V material on silicon—without the need for…

Microring lasers feature ultralow thresholds and inherent wavelength-division multiplexing functionalities, offering an attractive approach to miniaturizing photonics in a compact area. Here, we present static and dynamic properties of microring…

1.3 μm InAs quantum dot lasers on Si show a CW threshold current of 4.8 mA and extrapolated lifetimes of ten million hours at 35 °C and ~65,000 hours at 60 °C.

Intel has won SEMI’s 2018 Award for the Americas. SEMI honored the celebrated chipmaker for pioneering process and integration breakthroughs that enabled the first high-volume Integrated Silicon Photonics Transceiver. The award was presented…

This work reports on the ultra-low linewidth enhancement factor (aH-factor) of semiconductor quantum dot lasers epitaxially grown on silicon. Owing to the low density of threading dislocations and resultant high gain, an aH value of 0.13 that is…

Only a few decades ago, finding a particular channel on the radio or television meant dialing a knob by hand, making small tweaks and adjustments to hone in on the right signal. Of course, we now take such fine tuning for granted, simply pressing…

We investigate the impact of threading dislocation density on the reliability of 1.3 lm InAs quantum dot lasers epitaxially grown on Si. A reduction in the threading dislocation density from 2.8108 cm2 to 7.3106 cm2 has improved the laser…

The first single-section quantum dot mode-locked laser directly grown on a CMOS-compatible silicon substrate has been produced by researchers in the US. Their achievement could open the door to much lower complexity, cheaper laser sources for…

Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and scalability advantages over heterogeneous integration. The challenge is that epitaxial growth introduces high densities of crystalline defects that…

Lithium niobate on insulator (LNOI) technology is revolutionizing the lithium niobate industry, enabling higher performance, lower cost and entirely new devices and applications. The availability of LNOI wafers has sparked significant interest in…

Low-loss arrayed waveguide gratings (AWGs) are demonstrated at a 2.0-μm wavelength. These devices promote rapidly developing photonic applications, supported by the recent development of mid-infrared lasers integrated on silicon (Si). Multi-…

University of California Santa Barbara (UCSB) in the USA has been working to optimize gallium arsenide (GaAs) molecular beam epitaxy (MBE) on gallium phosphide on silicon (GaP/Si) [Daehwan Jung et al, J. Appl. Phys., vol122, p225703, 2017].…

Abstract—We design, fabricate, and characterize ultra-low loss continuously tunable optical true time delay devices based on Si3N4 ring resonators in a side-coupled integrated spaced sequence of resonators (SCISSOR) structure. A large tunable…

Important advances: 

1. Record low threshold current density for growth on (100) Si: 198 A/cm^2 
2. Record low threshold current for any F-P laser grown on Si
3. Record high injection efficiency: 87%
4. Record long…