Publications

Piezoelectric tuning of a suspended silicon nitride ring resonator W. Jin, E. J. Stanton, N. Volet, R. G. Polcawich, D. Baney, P. Morton, and J. E. Bowers 2017 IEEE Photonics Conference (IPC)pp. 117-118; Orlando, FL November 23, 2017 piezoelectric-resonance-tuning1.17 MB
Integrated broadband Ce:YIG/Si Mach–Zehnder optical isolators with over 100  nm tuning range D. Huang, P. Pintus, Y. Shoji, P. Morton, T. Mizumoto, and J. E. Bowers Optics LettersVolume 42, Issue 23, pages 4901-4904 November 21, 2017 huang17ol.pdf1.85 MB
Large-Area Direct Hetero-Epitaxial Growth of 1550-nm InGaAsP Multi-Quantum-Well Structures on Patterned Exact-Oriented (001) Silicon Substrates by Metal Organic Chemical Vapor Deposition L. Megalini, B. C. Cabinian, H. Zhao, D. C. Oakley, J. E. Bowers, and J. Klamkin Journal of Electronic Materialshttps://doi.org/10.1007/s11664-017-5887-9 November 2, 2017 Large-Area Direct Hetero-Epitaxial Growth of 1550-nm InGaAsP Multi-Quantum-Well Structures on Patterned Exact-Oriented (001) Silicon Substrates by Metal Organic Chemical Vapor Deposition.pdf1.87 MB
O-band electrically injected InAs quantum-dot micro-ring lasers on V-groove patterned and unpatterned (001) silicon Y. Wan, J. Norman, D. Jung, C. Shang, L. Macfarlane, Q. Li, MJ. Kennedy, Z. Zhang, A. C. Gossard, E. L. Hu, K. M. Lau, and J. E. Bowers Optics ExpressVolume 25, Number 22 26853-26860 October 30, 2017 O-band electrically injected quantum dot micro-ring lasers on on-axis (001) GaPSi and V-groove Si.pdf5.18 MB
Monolithically Integrated InAs/InGaAs Quantum Dot Photodetectors on Silicon Substrates Y. Wan, Z. Zhang, R. Chao, J. Norman, D. Jung, C. Shang, Q. Li, MJ. Kennedy, D. Liang, C. Zhang, J. Shi, A. C. Gossard, E. L. Hu, K. M. Lau, and J. E. Bowers Optics ExpressVolume 25, Number 22, 27715-27723 October 30, 2017 Monolithically Integrated InAsInGaAs Quantum Dot Photodetectors on Silicon Substrates.pdf7.67 MB
Stable Arbitrary Frequency Generator T. Komljenovic, B. Szafraniec, D. Barney, and J. E. Bowers Journal of Lightwave TechnologyVolume 35, Issue 22, pages 4897-4902 October 26, 2017 komljenovic17jlt.pdf881.44 KB
Interband Cascade Laser on Silicon A. Spott, E. J. Stanton, A. Torres, M. L. Davenport, C. L. Canedy, I. Vurgaftman, M. Kim, C. S. Kim, C. D. Merritt, W. W. Bewley, J. R. Meyer, and J. E. Bowers IEEE Photonics Conference 2017Post-Deadline; Orlando, FL October 12, 2017 Spott_IPC_PD_final.pdf520.9 KB
Heterogeneous Silicon III-V Mode-Locked Lasers M. L. Davenport September 29, 2017 Davenport Heterogeneous Silicon III-V mode locked lasers rev2.pdf10.94 MB
1.3 µm submilliamp threshold quantum dot micro-lasers on Si Y. Wan, J. Norman, Q. Li, MJ. Kennedy, D. Liang, C. Zhang, D. Huang, Z. Zhang, A. Y. Liu, A. Torres, D. Jung, A. C. Gossard, E. L. Hu, K. M. Lau, and J. E. Bowers Opticavolume 4, Number 8, 940-944 August 4, 2017 1.3 μm submilliamp threshold quantum dot micro-lasers on Si.pdf1.75 MB
Dynamic characteristics of 410 nm semipolar (202 ̅1 ̅) III-nitride laser diodes with a modulation bandwidth over 5 GHz C. Lee, C. Zhang, D. L. Becerra, S. Lee, S. H. Oh, R. M. Farrell, J. S. Speck, S. Nakamura, J. E. Bowers, and S. P. DenBaars Applied Physics Letters109, 101104 August 1, 2017 Lee16apl.pdf1.59 MB