Publications

Strong frequency conversion in heterogeneously integrated GaAs resonators L. Chang, A. Boes , P. Pintus , J. D. Peters, MJ Kennedy, X.-W. Guo, N. Volet, S.-P. Yu, S. B. Papp, and J. E. Bowers APL Photonics4, 036103 March 15, 2019 chang19apl.pdf2.06 MB
Reduced thermal conductivity of epitaxial GaAs on Si due to symmetry-breaking biaxial strain A. Vega-Flick, D. Jung, S. Yue, J. E. Bowers, and B. Liao Physical Review Materials3, 034603 March 11, 2019 vegaflick19prm.pdf1.12 MB
High-channel-count 20 GHz passively mode-locked quantum dot laser directly grown on Si with 4.1 Tbit/s transmission capacity S. Liu, X. Wu, D. Jung, J. C. Norman, M. J. Kennedy, H. K. Tsang, A. C. Gossard, and J. E. Bowers OpticaVol. 6, No. 2, 128-134 January 25, 2019 liu19o.pdf1.92 MB
Multi-Spectral Quantum Cascade Lasers on Silicon With Integrated Multiplexers E. J. Stanton, A. Spott, J. Peters, M. L. Davenport, A. Malik, N. Volet, J. Liu, C. D. Merritt, I. Vurgaftman, C. S. Kim, J. R. Meyer, and J. E. Bowers PhotonicsVol. 6, No. 1, 6 January 24, 2019 stanton19p_reduced.pdf1.09 MB
Low-Threshold Continuous-Wave Operation of Electrically-Pumped 1.55 μm InAs Quantum Dash Microring Lasers Y. Wan, D. Jung, C. Shang, N. Collins, I. MacFarlane, J. Norman, M. Dumont, A. C. Gossard, and J. E. Bowers ACS Photonicshttp://dx.doi.org/10.1021/acsphotonics.8b01341 December 26, 2018 wan18acs_reduced.pdf676.89 KB
High efficiency SHG in heterogenous integrated GaAs ring resonators L. Chang, A. Boes, P. Pintus, J. D. Peters, MJ. Kennedy, X. Guo, N. Volet, S. Yu, S. A. Diddams, S. B. Papp, and J. E. Bowers IEEE Photonics Conference 2018Reston, Virginia November 30, 2018 chang18ipc.pdf840.53 KB
Analysis of the optical feedback dynamics in InAs/GaAs quantum dot lasers directly grown on silicon H. Huang, J. Duan, D. Jung, A. Liu, Z. Zhang, J. Norman, J. E. Bowers, and F. Grillot Journal of the Optical Society of America BVol 35, No 11, 2780-2787 October 12, 2018 huang18josab_reduced-compressed.pdf429.31 KB
Heterogeneously Integrated GaAs Waveguides on Insulator for Efficient Frequency Conversion L. Chang, A. Boes, X. Guo, D. T. Spencer, M. J. Kennedy, J. D. Peters, N. Volet, J. Chiles, A. Kowligy, N. Nader, D. D. Hickstein, E. J. Stanton, S. A. Diddams, S. B. Papp, and J. E. Bowers Laser & Photonics ReviewsArticle number 1800149 October 10, 2018 chang18lpr.pdf656.87 KB
Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits 743. M. Buffolo, M. Pietrobon, C. De Santi, F. Samparisi, M. L. Davenport, J. E. Bowers, G. Meneghesso, E. Zanoni, and M. Meneghini Microelectronics Reliability88-90, 855-858 September 30, 2018 buffolo18mr.pdf829.44 KB
Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si D. Inoue, Y. Wan, D. Jung, J. Norman, C. Shang, N. Nishiyama, S. Arai, A. C. Gossard, and J. E. Bowers Applied Physics Letters113, 093506 August 30, 2018 inoue18apl.pdf1.76 MB