Photonic Integration With Epitaxial III–V on Silicon

Author(s)
A. Y. Liu and J. Bowers
Publication Image
Alan Liu
Publication Date
Publication Type
Journal
Journal/Conference Name
IEEE Journal of Selected Topics in Quantum Electronics
Indexing
Volume 24, Issue 6, 6000412

We present a brief overview of the various leading platforms for photonic integration. Subsequently, we consider the possibility of a photonic integrated circuit platform utilizing epitaxially grown III–V material on silicon—without the need for wafer bonding, or an externally coupled laser. Finally, a technoeconomic analysis contrasting the aforementioned platforms will be presented.

Publication File
Research Areas
Silicon Photonics
More Research Areas
Epitaxial Growth on Si