Low dark current III-V on silicon photodiodes by heteroepitaxy

K. Sun, D. Jung, C. Shang, A. Liu, J. Morgan, J. Zang, Q. Li, J. Klamkin, J. E. Bowers, and A. Beling
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(a) Epi-layer designs for PIN and MUTC PDs. (b) PD structures that were grown and fabricated.
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Journal/Conference Name
Optics Express
Vol 26, No 10, 13605-13613

Top-illuminated PIN and modified uni-traveling carrier (MUTC) photodiodes based on InGaAs/InAlAs/InP were epitaxially grown on Si templates. Photodiodes with 30-┬Ám diameter have dark currents as low as 10 nA at 3 V corresponding to a dark current density of only 0.8 mA/cm2 . The responsivity, 3-dB bandwidth, output power and third-order output intercept point (OIP3) were 0.79 A/W, 9 GHz, 2.6 dBm and 15 dBm, respectively.

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Research Areas
Silicon Photonics