Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits

743. M. Buffolo, M. Pietrobon, C. De Santi, F. Samparisi, M. L. Davenport, J. E. Bowers, G. Meneghesso, E. Zanoni, and M. Meneghini
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L-I-T characterization of an untreated loop-mirror laser. The tempera-ture dependence of threshold current is highlighted by the blue scatter plot.
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Microelectronics Reliability
88-90, 855-858

This paper reports on the degradation processes of heterogeneous III-V/Silicon loop-mirrors laser-diodes designed as the optical sources for next-generation Photonic Integrated Circuits (PICs) operating at 1.55 μm. By submitting the devices to a series of constant-current accelerated aging experiments we were able to identify a common set of degradation mechanisms, including: (i) an increase in threshold current, (ii) a decrease of the sub-threshold emission, (iii) a decrease in the operating voltage of the device and (iv) a small decrease in the slope-efficiency of the laser. The strong correlation between these degradation processes suggests that the loss in optical performance experienced by the devices can be attributed to a decrease in the non-radiative carrier lifetime, as a consequence of the generation/propagation of defects towards the active region of the laser diodes.

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Research Areas
Silicon Photonics