Electrically pumped quantum-dot lasers grown on 300mm patterned Si photonic wafers

C. Shang, K. Feng, E. T. Hughes, A. Clark, M. Debnath, R. Koscica, G. Leake, J. Herman, D. Harame, P. Ludewig, Y. Wan, and J. E. Bowers
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As-patterned 300 mm wafer with diced coupon
Publication Date
Publication Type
Journal/Conference Name
Light: Science & Application
11, 299

Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via direct epitaxial growth is a
promising solution for on-chip light sources. Recent developments have demonstrated superior device reliability in
blanket hetero-epitaxy of III–V devices on Si at elevated temperatures. Yet, thick, defect management epi designs
prevent vertical light coupling from the gain region to the Si-on-Insulator waveguides. Here, we demonstrate the first
electrically pumped QD lasers grown by molecular beam epitaxy on a 300mm patterned (001) Si wafer with a butt-coupled
configuration. Unique growth and fabrication challenges imposed by the template architecture have been
resolved, contributing to continuous wave lasing to 60 °C and a maximum double-side output power of 126.6mW at
20 °C with a double-side wall-plug efficiency of 8.6%. The potential for robust on-chip laser operation and efficient low loss
light coupling to Si photonic circuits makes this heteroepitaxial integration platform on Si promising for scalable
and low-cost mass production.

Research Areas
Integration Technologies
More Research Areas
Epitaxial Growth on Si