Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes

Author(s)
K.-G. Gan, C.-K. Sun, S. P. DenBaars, and J. E. Bowers
Publication Date
Publication Type
Journal
Journal/Conference Name
Applied Physics Letters
Indexing
Vol. 85, No. 23, pp 4675-4677
Publication File
gan04APL.pdf57.92 KB