Publications

Large-Area Direct Hetero-Epitaxial Growth of 1550-nm InGaAsP Multi-Quantum-Well Structures on Patterned Exact-Oriented (001) Silicon Substrates by Metal Organic Chemical Vapor Deposition L. Megalini, B. C. Cabinian, H. Zhao, D. C. Oakley, J. E. Bowers, and J. Klamkin Journal of Electronic Materialshttps://doi.org/10.1007/s11664-017-5887-9 November 2, 2017 Large-Area Direct Hetero-Epitaxial Growth of 1550-nm InGaAsP Multi-Quantum-Well Structures on Patterned Exact-Oriented (001) Silicon Substrates by Metal Organic Chemical Vapor Deposition.pdf1.87 MB
Monolithically Integrated InAs/InGaAs Quantum Dot Photodetectors on Silicon Substrates Y. Wan, Z. Zhang, R. Chao, J. Norman, D. Jung, C. Shang, Q. Li, MJ. Kennedy, D. Liang, C. Zhang, J. Shi, A. C. Gossard, E. L. Hu, K. M. Lau, and J. E. Bowers Optics ExpressVolume 25, Number 22, 27715-27723 October 30, 2017 Monolithically Integrated InAsInGaAs Quantum Dot Photodetectors on Silicon Substrates.pdf7.67 MB
O-band electrically injected InAs quantum-dot micro-ring lasers on V-groove patterned and unpatterned (001) silicon Y. Wan, J. Norman, D. Jung, C. Shang, L. Macfarlane, Q. Li, MJ. Kennedy, Z. Zhang, A. C. Gossard, E. L. Hu, K. M. Lau, and J. E. Bowers Optics ExpressVolume 25, Number 22 26853-26860 October 30, 2017 O-band electrically injected quantum dot micro-ring lasers on on-axis (001) GaPSi and V-groove Si.pdf5.18 MB
Interband Cascade Laser on Silicon A. Spott, E. J. Stanton, A. Torres, M. L. Davenport, C. L. Canedy, I. Vurgaftman, M. Kim, C. S. Kim, C. D. Merritt, W. W. Bewley, J. R. Meyer, and J. E. Bowers IEEE Photonics Conference 2017Post-Deadline; Orlando, FL October 12, 2017 Spott_IPC_PD_final.pdf520.9 KB
Heterogeneous Silicon III-V Mode-Locked Lasers M. L. Davenport September 29, 2017 Davenport Heterogeneous Silicon III-V mode locked lasers rev2.pdf10.94 MB
1.3 µm submilliamp threshold quantum dot micro-lasers on Si Y. Wan, J. Norman, Q. Li, MJ. Kennedy, D. Liang, C. Zhang, D. Huang, Z. Zhang, A. Y. Liu, A. Torres, D. Jung, A. C. Gossard, E. L. Hu, K. M. Lau, and J. E. Bowers Opticavolume 4, Number 8, 940-944 August 4, 2017 1.3 μm submilliamp threshold quantum dot micro-lasers on Si.pdf1.75 MB
Dynamic characteristics of 410 nm semipolar (202 ̅1 ̅) III-nitride laser diodes with a modulation bandwidth over 5 GHz C. Lee, C. Zhang, D. L. Becerra, S. Lee, S. H. Oh, R. M. Farrell, J. S. Speck, S. Nakamura, J. E. Bowers, and S. P. DenBaars Applied Physics Letters109, 101104 August 1, 2017 Lee16apl.pdf1.59 MB
Compact Modeling for Silicon Photonic Heterogeneously Integrated Circuits Z. Zhang, R. Wu, Y. Wang, C. Zhang, E. Stanton, C. Schow, T. Cheng, J. Bowers Journal of Lightwave TechnologyVol. 35, No. 14 July 15, 2017 zhang17jlt.pdf1.64 MB
Evolution of Photonic Integrated Circuits J. E. Bowers Device Research Conference (DRC)University of Notre Dame, South Bend, IN June 25, 2017 C1029.pdf319.28 KB
InAs/GaAs quantum dot lasers on exact GaP/Si (001) and other templates J. E. Bowers, A. Y. Liu, D. Jung, J. Norman, A. C. Gossard, Y. Wan, Q. Li, K. M. Lau, and M. L. Lee CS Mantech ConferenceIndian Wells, CA May 22, 2017 C1030.pdf536.62 KB