Effect of growth interruption in 1.55 μm InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy
We report the effect of growth interruptions on the structural and optical properties of InAs/InAlGaAs/
InP quantum dots using molecular beam epitaxy. We find that the surface quantum dots experience an
unintended ripening process during the sample cooling stage, which reshapes the uncapped InAs
nanostructures. To prevent this, we performed a partial capping experiment to effectively inhibit
structural reconfiguration of surface InAs nanostructures during the cooling stage, revealing that InAs