Facilities

Effect of growth interruption in 1.55 μm InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy

We report the effect of growth interruptions on the structural and optical properties of InAs/InAlGaAs/
InP quantum dots using molecular beam epitaxy. We find that the surface quantum dots experience an
unintended ripening process during the sample cooling stage, which reshapes the uncapped InAs
nanostructures. To prevent this, we performed a partial capping experiment to effectively inhibit
structural reconfiguration of surface InAs nanostructures during the cooling stage, revealing that InAs

Effect of phonon confinement on the thermal conductivity of In0.53Ga0.47As nanofilms

Over the past few decades, significant progress has been made to manipulate thermal transport in solids. Most of the effort has focused on reducing the phonon mean free path through boundary scattering. Herein, we demonstrate that the phonon confinement effect can also be used as a tool for managing thermal transport in solids. We measured the thermal conductivities of 10–70-nm-thick In0.53Ga0.47As nanofilms and found that the thermal conductivities decrease as the film thickness decreases. However, the reasons for this reduction differ for films with different thicknesses.