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We investigate the impact of threading dislocation density on the reliability of 1.3 lm InAs quantum dot lasers epitaxially grown on Si. A reduction in the threading dislocation density from 2.8108 cm2 to 7.3106 cm2 has improved the laser lifetime by about five orders of magnitude when aged continuous-wave near room temperature (35 C). We have achieved extrapolated lifetimes (time to double initial threshold) more than 10 106 h.

Mid-infrared (MIR) silicon photonic systems show great promise for miniaturizing a variety of sensing and detection technologies. Rapid progress has been made in recent years, and numerous passive and active MIR devices have now been constructed on various silicon-based platforms. We previously reported the heterogeneous integration on silicon of Fabry–Perot and distributed feedback quantum cascade lasers (QCLs) operating at 4.8 μm.