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Heat accumulation prevents semiconductor lasers from operating at their full potential. This can be addressed through heterogeneous integration of a III–V laser stack onto non-native substrate materials with high thermal conductivity. Here, we demonstrate III–V quantum dot lasers heterogeneously integrated on silicon carbide (SiC) substrates

We demonstrate a heterogeneously integrated laser on silicon exhibiting a sub-20 kHz Lorentzian linewidth over a wavelength tuning range of 58 nm from 1350 to 1408 nm, which are record values to date for E-band integrated lasers in the literature. Wide wavelength tuning is achieved with an integrated Si ring-resonator-based Vernier mirror, which also significantly reduces the Lorentzian linewidth.