Facilities

Electrically pumped quantum-dot lasers grown on 300mm patterned Si photonic wafers

Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via direct epitaxial growth is a
promising solution for on-chip light sources. Recent developments have demonstrated superior device reliability in
blanket hetero-epitaxy of III–V devices on Si at elevated temperatures. Yet, thick, defect management epi designs
prevent vertical light coupling from the gain region to the Si-on-Insulator waveguides. Here, we demonstrate the first

Extending the spectrum of fully integrated photonics to submicrometre wavelengths

Integrated photonics has profoundly affected a wide range of technologies
underpinning modern society. The ability to fabricate a complete optical system on
a chip offers unrivalled scalability, weight, cost and power efficiency. Over the last
decade, the progression from pure III–V materials platforms to silicon photonics has
significantly broadened the scope of integrated photonics, by combining integrated
lasers with the high-volume, advanced fabrication capabilities of the commercial