Electrically pumped quantum-dot lasers grown on 300mm patterned Si photonic wafers
Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via direct epitaxial growth is a
promising solution for on-chip light sources. Recent developments have demonstrated superior device reliability in
blanket hetero-epitaxy of III–V devices on Si at elevated temperatures. Yet, thick, defect management epi designs
prevent vertical light coupling from the gain region to the Si-on-Insulator waveguides. Here, we demonstrate the first