Compliant III-V On (001) Si Substrates for Direct Laser Growth
Abstract: Integrating high-performance III-V devices on the mature silicon platform has been a long pursuit over the past few decades. Direct epitaxial growth offers an alternative technology to bonding. Using nano-patterned Si substrates, we created III-V on silicon templates with low defect density and smooth surface morphology for laser growth. Such antiphase-domain (APD)-free III-V on silicon compliant templates with high crystalline quality (benchmarked by narrow XRD halfwidths) are grown without the need of special off-cut substrates and/or Ge buffer.