Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor

J. Duan, H. Huang, D. Jung, Z. Zhang, J. Norman, J. E. Bowers and F. Grillot
Publication Image
The aH-factor as a function of temperature for p-doped (red) and undoped (blue) QD lasers. The linear curve-fittings (dashed lines) are the guide to the eye only.
Publication Date
Publication Type
Journal/Conference Name
Applied Physics Letters
112, 251111 (2018)

This work reports on the ultra-low linewidth enhancement factor (aH-factor) of semiconductor quantum dot lasers epitaxially grown on silicon. Owing to the low density of threading dislocations and resultant high gain, an aH value of 0.13 that is rather independent of the temperature range (288 K–308 K) is measured. Above the laser threshold, the linewidth enhancement factor does not increase extensively with the bias current which is very promising for the realization of future integrated circuits including high performance laser sources.

Publication File
duan18apl.pdf918.74 KB
Research Areas
Silicon Photonics