Effects of modulation p doping in InAs quantum dot lasers on silicon

Author(s)
Z. Zhang, D. Jung, J. C. Norman, P. Patel, W. W. Chow, and J. E. Bowers
Publication Image
Threshold current versus p-doping density for resonator lengths as labeled.
Publication Date
Publication Type
Journal
Journal/Conference Name
Applied Physics Letters
Indexing
113, 061105

We investigate, both experimentally and theoretically, the gain characteristics of modulation p-doped 1.3 μm quantum dot lasers epitaxially grown on silicon. Gain spectra and transparency points are measured for structurally identical lasers with varying levels of p doping in the active region. A many-body model is employed to facilitate understanding of the material gain characteristics. It has been found that appropriate p doping greatly reduces transparency and improves differential gain. It is also found that the improvements saturate with excessive doping because of the increase in nonradiative carrier recombination.

Publication File
Research Areas
Silicon Photonics