Effects of modulation p doping in InAs quantum dot lasers on silicon

Z. Zhang, D. Jung, J. C. Norman, P. Patel, W. W. Chow, and J. E. Bowers
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Threshold current versus p-doping density for resonator lengths as labeled.
Publication Date
Publication Type
Journal/Conference Name
Applied Physics Letters
113, 061105

We investigate, both experimentally and theoretically, the gain characteristics of modulation p-doped 1.3 μm quantum dot lasers epitaxially grown on silicon. Gain spectra and transparency points are measured for structurally identical lasers with varying levels of p doping in the active region. A many-body model is employed to facilitate understanding of the material gain characteristics. It has been found that appropriate p doping greatly reduces transparency and improves differential gain. It is also found that the improvements saturate with excessive doping because of the increase in nonradiative carrier recombination.

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Research Areas
Silicon Photonics