Publications

High-power, high-speed, low-temperature-grown GaAs p-i-n traveling-wave photodetector Yi-Jen Chiu; S.B. Fleischer, J.E. Bowers, A.C. Gossard, U.K. Mishra Conference on Lasers and Electro-Optics (CLEO´98)pp. 501-502, San Francisco, CA May 1, 1998 chiu98cleo.pdf287.72 KB
The Microstrip Laser D. Tauber, M. Horita, J. Piprek, P. Abraham, A. L. Holmes, Jr., J. E. Bowers IEEE Photonics Technology Lettersvol. 10, no. 4 pp. 478-480 April 1, 1998 tauber98ptl.pdf52 KB
Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence M. S. Minsky, S. B. Fleischer, A. C. Abare, J. E. Bowers, E. L. Hu, S. Keller, S. P. Denbaars Applied Physics Lettersvol. 72, no. 9, pp. 1066-1068 March 1, 1998 minsky98apl.pdf68.3 KB
Design and Performance of Semiconductor Microstrip Lasers D. A. Tauber March 1, 1998 1998 - Tauber - Design and Performance of Semiconductor Microstrip Lasers.PDF7.35 MB
Intraband carrier kinetics and picosecond pulse shaping in field-enhanced semiconductor absorbers A. V. Uskov, J. R. Karin, J. E. Bowers, J. McInerney Optics Lettersvol. 23, no. 5, pp. 376-378 March 1, 1998 uskov98ol.pdf273 KB
Fused vertical couplers B. Liu, A. Shakouri, P. Abraham, B.-G Kim, J. E. Bowers Technical Digest of 23th Optical Fiber Communication Conferepp. 144-145, San Jose, CA. February 1, 1998
Characterization of InGaAs quantum dot lasers with a single quantum dot layer as an active region R. Mirin, A. Gossard and J. E. Bowers Elsevier Science B.V. Physica E Low-Dimensional Systems and pp. 738-742 January 1, 1998 1998 mirin gossard bowers single quantum dot layer.pdf105.17 KB
Thermoelectric Effects in Submicron Heterostructure Barriers A. Shakouri, E. Y. Lee, D.L. Smith, V. Narayanamurti and J. E. Bowers Microscale Thermophysical Engineeringpp. 37-47 January 1, 1998 shakouri98mte.pdf460 KB
Ultrafast Transport Dynamics of p-i-n Photodetectors Under High Power Illumination C.-K. Sun, I.H. Tan, J.E.Bowers IEEE Photonics Technology Lettersvol. 10, no. 1, pp. 135-137 January 1, 1998 sun98ptl.pdf40 KB
Ultrafast (370 GHz bandwidth) p-i-n traveling wave photodetector using low-temperature-grown GaAs Y.-J. Chiu, S. B. Fleischer, D. Lasaosa, J. E. Bowers Applied Physics Lettersvol. 71, no. 17, pp. 2508-2510 October 1, 1997 chiu97apl.pdf454 KB