| Improved Extinction Ratio in Ultra Short Directional Couplers Using Asymmetric Structures |
B. Kim, A. Shakouri, B. Liu, J. E. Bowers |
Japanese Journal of Applied Physicsvol. 37, no. 2, pp. L930-L932 |
August 1, 1998 |
kim98jjap.pdf158.1 KB |
| Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes |
S. Chichibu, D. A. Cohen, M. P. Mack, A. C. Abare, P. Kozodoy, M. Minsky, S. Fleischer, S. Keller, J. E. Bowers, U. K. Mishra, L. A. Coldren, D. R. Clarke, and S. P. DenBaars |
Applied Physics Lettersvol. 73, no. 4, pp. 496-498 |
July 27, 1998 |
chichibu98apl2.pdf81 KB |
| High-Speed Low-Temperature-Grown GaAs p-i-n Traveling-Wave Photodetector |
Y.-J. Chiu, S. B. Fleischer, J. E. Bowers |
IEEE Photonics Technology Lettersvol. 10, no. 7, pp. 1012-1014 |
July 1, 1998 |
chiu98ptl.pdf50.4 KB |
| GaAs-based, 1.55 µm high speed, high saturation power, low-temperature grown GaAs p-i-n photodetector |
Yi-Jen Chiu, S.Z. Zhang, S.B. Fleischer, J.E. Bowers, U.K. Mishra |
Electronics Lettersvol.34, no.12, pp. 1253-1255 |
June 11, 1998 |
chiu98ell.pdf325 KB |
| High-Temperature Long-Wavelength Vertical-Cavity Lasers |
N. M. Margalit |
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June 1, 1998 |
1998 High-Temperature Long-Wavelength Vertical-Cavity Lasers.PDF3.07 MB |
| Growth and Properties of InGaN Nanoscale Islands on GaN |
S. Keller, B.P. Keller, M.S. Minsky, J.E. Bowers, U.K. Mishra, S.P. DenBaars, W. Seifert |
Journal of Crystal Growthvol. 189/190, pp. 29-32, |
June 1, 1998 |
keller98jcg.pdf152 KB |
| Fused vertical couplers |
B. Liu, A. Shakouri, P. Abraham, B.-G Kim, A. W. Jackson, J. E. Bowers |
Applied Physics Lettersvol. 72, no. 21, pp. 2637-2638 |
May 25, 1998 |
liu98apl.pdf256 KB |
| III-V Based Heterostructure Integrated Thermionic Coolers |
A. Shakouri, P. Abraham, C. LaBounty, J. Bowers |
International Conference on ThermoelectricsNagoya, Japan |
May 24, 1998 |
shakouri98ict.pdf293.58 KB |
| Effects of an InGaP electron barrier layer on 1.55 ìm laser diode performance |
P. Abraham, J. Piprek, S.P. DenBaars, J.E. Bowers |
Proceedings of 10th International Conference on Indium Phosppp. 713-716, Tsukuba, Japan |
May 11, 1998 |
abraham98iprm.pdf285.55 KB |
| Cleaved and Etched Facet Nitride Laser Diodes |
A. C. Abare, M. P. Mack, M. Hansen, R. K. Sink, P. Kozodoy, S. Keller, J. S. Speck, J. E. Bowers, U. K. Mishra, L. A. Coldren, S. P. DenBaars |
IEEE Journal on Selected Topics in Quantum Electronicsvol. 4, no. 3, pp. 505-509 |
May 1, 1998 |
abare98jstqe.pdf89 KB |