Traveling-wave Electroabsorption Modulators	Shengzhong Zhang		April 1, 1999	1999 Traveling-wave Electroabsorption Modulators.PDF5.66 MB
Characteristic equations for different ARROW structures	B. Liu, A. Shakouri, J. E. Bowers	Optical and Quantum Electronicsvol. 31, no. 12, pp. 1267-1276	March 31, 1999	liu99oqe.pdf9.41 MB
Fused III-V Vertical Coupler Filter with Reduced Polarization Sensitivity	B. Liu, A. Shakouri, P. Abraham, Y.J. Chiu, J.E. Bowers	Electronics Lettersvol. 35, no. 6, pp. 481-482	March 18, 1999	liu99ell.pdf216.62 KB
Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth	S. F. Chichibu, H. Marchand, M. S. Minsky, S. Keller, P. T. Fini, J. P. Ibbetson, S. B. Fleischer, J. S. Speck, J. E. Bowers, E. Hu, U. K. Mishra, S. P. DenBaars, T. Deguchi, T. Sota, S. Nakamura	Applied Physics Lettersvol. 74, no. 10, pp. 1460-1462	March 8, 1999	chichibu99apl.pdf69 KB
25-GHz Polarization-Insensitive Electroabsorption Modulators with Traveling-Wave Electrodes	S. Z. Zhang, Y.-J. Chiu, P. Abraham, J. E. Bowers	IEEE Photonics Technology Lettersvol. 11, no. 2, pp. 191-193	February 1, 1999	zhang99ptl.pdf137 KB
Improvement of Internal Quantum Efficiency in 1.55 µm Laser Diodes with InGaP Electron Stopper Layer	P. Abraham, J. Piprek, S. P. DenBaars, J. E. Bowers	Japanese Journal of Applied Physics, Part 1vol. 38, no. 2B, pp. 90-93	February 1, 1999	abraham99jjap.pdf312 KB
3D Photonic Integrated Circuits for WDM Applications	A. Shakouri, B. Liu, P. Abraham, J.E. Bowers	SPIE’s International SymposiumSan Jose, CA	January 25, 1999
Carrier nonuniformity effects on the internal efficiency of multiquantum-well lasers	J. Piprek, P. Abraham, and J. E. Bowers	Applied Physics Lettersvol. 74, no. 4, pp. 489-491	January 25, 1999	piprek99apl.pdf71 KB
Thermionic emission cooling in single barrier heterostructures	A. Shakouri, C. LaBounty, J. Piprek, P. Abraham, J. E. Bowers	Applied Physics Lettersvol. 74, no. 1, pp. 88-89	January 1, 1999	shakouri99apl.pdf56.06 KB
Study of Temperature Effects on Loss Mechanisms in 1.55 µm Laser Diodes with InGaP Electron Stopper Layer	P. Abraham, J. Piprek, S. P. DenBaars, and J. E. Bowers	Semiconductor Science and Technologyvol. 14, no. 5, pp. 419-424	January 1, 1999	abraham99sst.pdf224 KB