GaAs-based, 1.55 µm high speed, high saturation power, low-temperature grown GaAs p-i-n photodetector

Author(s)

Yi-Jen Chiu, S.Z. Zhang, S.B. Fleischer, J.E. Bowers, U.K. Mishra

Publication Date

Thu, 06/11/1998 - 12:00

Publication Type

Journal

Journal/Conference Name

Electronics Letters

Indexing

vol.34, no.12, pp. 1253-1255

Publication File

Related Profiles

Research Areas

Photodetectors