GaSb Based p-i-n Photodiode with Partially Depleted Absorber for High-Speed and High-Power Performance at 2.5 μm Wavelength

Author(s)
J.-M. Wun, Y.-W. Wang, Y.-H. Chen, J. E. Bowers, and J.-W. Shi
Publication Date
Publication Type
Journal
Journal/Conference Name
IEEE Transactions on Electron Devices
Indexing
Volume: 63, Issue: 7, Page(s): 2796 – 2801
Publication File