Low dark current III-V on silicon photodiodes by heteroepitaxy

Author(s)
K. Sun, D. Jung, C. Shang, A. Liu, J. Morgan, J. Zang, Q. Li, J. Klamkin, J. E. Bowers, and A. Beling
Publication Image
(a) Epi-layer designs for PIN and MUTC PDs. (b) PD structures that were grown and fabricated.
Publication Date
Publication Type
Journal
Journal/Conference Name
Optics Express
Indexing
Vol 26, No 10, 13605-13613

Top-illuminated PIN and modified uni-traveling carrier (MUTC) photodiodes based on InGaAs/InAlAs/InP were epitaxially grown on Si templates. Photodiodes with 30-┬Ám diameter have dark currents as low as 10 nA at 3 V corresponding to a dark current density of only 0.8 mA/cm2 . The responsivity, 3-dB bandwidth, output power and third-order output intercept point (OIP3) were 0.79 A/W, 9 GHz, 2.6 dBm and 15 dBm, respectively.

Publication File
Research Areas
Silicon Photonics