Low dark current III-V on silicon photodiodes by heteroepitaxy

Author(s)

K. Sun, D. Jung, C. Shang, A. Liu, J. Morgan, J. Zang, Q. Li, J. Klamkin, J. E. Bowers, and A. Beling

Publication Image

(a) Epi-layer designs for PIN and MUTC PDs. (b) PD structures that were grown and fabricated.

Publication Date

Fri, 05/11/2018 - 12:00

Publication Type

Journal

Journal/Conference Name

Optics Express

Indexing

Vol 26, No 10, 13605-13613

Top-illuminated PIN and modified uni-traveling carrier (MUTC) photodiodes based on InGaAs/InAlAs/InP were epitaxially grown on Si templates. Photodiodes with 30-µm diameter have dark currents as low as 10 nA at 3 V corresponding to a dark current density of only 0.8 mA/cm2 . The responsivity, 3-dB bandwidth, output power and third-order output intercept point (OIP3) were 0.79 A/W, 9 GHz, 2.6 dBm and 15 dBm, respectively.

Publication File

sun18oe_reduced.pdf365.47 KB

Related Profiles

Daehwan Jung

John Bowers

Research Areas

Silicon Photonics