High-power sub-kHz linewidth lasers fully integrated on silicon

Author(s)
D. Huang, M. A. Tran, J. Guo, J. Peters, T. Komljenovic, A. Malik, P. A. Morton, and J. E. Bowers
Publication Image
Schematic of the E-DBR laser, with SEM images of the transitions between the various sections of the laser. (b) A ring resonator is in- corporated in the cavity to form the RAE-DBR laser.
Publication Date
Publication Type
Journal
Journal/Conference Name
Optica
Indexing
Vol. 6, No. 6

We demonstrate a fully integrated extended distributed Bragg reflector (DBR) laser with ∼1 kHz linewidth and over 37 mW output power, as well as a ring-assisted DBR laser with less than 500 Hz linewidth. The extended DBR lasers are fabricated by heterogeneously integrating III-V material on Si as a gain section plus a 15 mm long, low-kappa Bragg grating reflector in an ultralow-loss silicon waveguide. The low waveguide loss (0.16 dB/cm) and long Bragg grating with narrow bandwidth (2.9 GHz) are essential to reducing the laser linewidth while maintaining high output power and single-mode operation. The combination of narrow linewidth and high power enable its use in coherent communications, RF photonics, and optical sensing.

Publication File
Research Areas
Silicon Photonics