Facilities

Photonic Integration With Epitaxial III–V on Silicon

We present a brief overview of the various leading platforms for photonic integration. Subsequently, we consider the possibility of a photonic integrated circuit platform utilizing epitaxially grown III–V material on silicon—without the need for wafer bonding, or an externally coupled laser. Finally, a technoeconomic analysis contrasting the aforementioned platforms will be presented.

Congratulations to Alan Liu on the publication of this analysis of alternative approaches to high levels of optical integration

We present a brief overview of the various leading platforms for photonic integration. Subsequently, we consider the possibility of a photonic integrated circuit platform utilizing epitaxially grown III–V material on silicon—without the need for wafer bonding, or an externally coupled laser. Finally, a technoeconomic analysis contrasting the aforementioned platforms will be presented.