Photonic Integration With Epitaxial III–V on Silicon

A. Y. Liu and J. Bowers
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Alan Liu
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Journal/Conference Name
IEEE Journal of Selected Topics in Quantum Electronics
Volume 24, Issue 6, 6000412

We present a brief overview of the various leading platforms for photonic integration. Subsequently, we consider the possibility of a photonic integrated circuit platform utilizing epitaxially grown III–V material on silicon—without the need for wafer bonding, or an externally coupled laser. Finally, a technoeconomic analysis contrasting the aforementioned platforms will be presented.

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Research Areas
Silicon Photonics
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Epitaxial Growth on Si