We present a brief overview of the various leading platforms for photonic integration. Subsequently, we consider the possibility of a photonic integrated circuit platform utilizing epitaxially grown III–V material on silicon—without the need for wafer bonding, or an externally coupled laser. Finally, a technoeconomic analysis contrasting the aforementioned platforms will be presented.
IEEE Journal of Selected Topics in Quantum Electronics
Volume 24, Issue 6, 6000412
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Epitaxial Growth on Si