Facilities

Top-illuminated PIN and modified uni-traveling carrier (MUTC) photodiodes based on InGaAs/InAlAs/InP were epitaxially grown on Si templates. Photodiodes with 30-µm diameter have dark currents as low as 10 nA at 3 V corresponding to a dark current density of only 0.8 mA/cm2 . The responsivity, 3-dB bandwidth, output power and third-order output intercept point (OIP3) were 0.79 A/W, 9 GHz, 2.6 dBm and 15 dBm, respectively.

Heterogeneous silicon photonics using wafer bonding is reaching maturity with commercial products for the data center market being shipped in volume. Here we give an overview of recent research in the area showing record device performance by using the best of both worlds: III-V for light generation and Si for guiding the light. Utilizing the flexibility of the heterogeneous silicon platform, narrow-linewidth widely tunable lasers as well as fully integrated mode locked lasers with record pulse powers and pulse duration were demonstrated.