Facilities

Optical frequency comb direct generation on silicon by mode locked lasers (MLLs) is promising as it offers high wavelength channel counts and ultrashort pulses that will benefit future large-scale high capacity silicon photonic integrated circuits. Here, we demonstrate two-section quantum dot (QD) MLLs that are directly grown on a complementary metal–oxide–semiconductor compatible on-axis (001) silicon substrate by employing molecular beam epitaxy. The lasers, incorporating five layers of InAs QDs, operate in the O-band wavelength range with a pulse repetition rate around 9 GHz.

Densely integrated devices on a single chip enable both complex functionality and economy of scale. With a small footprint, microcavities with self-assembled InAs quantum dashes (QDashes) use minimal real estate cost while offering full photonic functionality. Here, the first roomtemperature-continuous-wave (CW) operation of electrically pumped InAs QDash microring lasers in the 1.55 μm telecom window is reported. CW lasing up to 55 °C has been achieved with a low threshold current density of 528 A/cm2 .