Facilities

High-channel-count 20 GHz passively mode-locked quantum dot laser directly grown on Si with 4.1 Tbit/s transmission capacity

Low-cost, small-footprint, highly efficient, and mass-producible on-chip wavelength-division-multiplexing (WDM) light sources are key components in future silicon electronic and photonic integrated circuits (EPICs), which can fulfill the rapidly increasing bandwidth and lower energy per bit requirements. We present here, for the first time to our knowledge, a low-noise high-channel-count 20 GHz passively mode-locked quantum dot laser grown on a complementary metal-oxide-semiconductor compatible on-axis (001) silicon substrate. The laser demonstrates a wide modelocking regime in the O band.

A mode locked quantum dot laser was used to transmit 4.1 Tbps of data on 64 lines spaced at 20 GHz.

Low-cost, small-footprint, highly efficient, and mass-producible on-chip wavelength-division-multiplexing (WDM) light sources are key components in future silicon electronic and photonic integrated circuits (EPICs), which can fulfill the rapidly increasing bandwidth and lower energy per bit requirements. We present here, for the first time to our knowledge, a low-noise high-channel-count 20 GHz passively mode-locked quantum dot laser grown on a complementary metal-oxide-semiconductor compatible on-axis (001) silicon substrate. The laser demonstrates a wide modelocking regime in the O band.