Facilities

we report the first O-band InAs quantum dot (QD) waveguide APDs monolithically grown on Si with a low dark current of 0.1 nA at unit gain and a responsivity of 0.234 A/W at 1.310 μm at unit gain (-5 V). In the linear gain mode, the APDs have a maximum gain of 198 and show a clear eye diagram up to 8 Gbit/s.
 

We demonstrate the first single-mode tunable InAs/GaAs quantum dot (QD) lasers at 1.3 µm. Without involving gratings or multiple epitaxial growths, 27-channel wavelength switching was achieved with side-mode-suppression-ratio of around 35 dB. Over 9 mW output power can be measured under continuous-wave electrical injection, with 716 kHz Lorentzian linewidth, 4 GHz 3-dB bandwidth, and 8-Gbit/s non-return-to-zero signal modulation.