Facilities

Ultra-low-loss waveguide fabrication typically requires high-temperature annealing beyond 1000◦C to reduce the hydrogen content in deposited dielectric films. However, realizing the full potential of an ultra-low loss will require the integration of active materials that cannot tolerate high temperature. Uniting ultra-low-loss waveguides with on-chip sources, modulators, and detectors will require a low-temperature, low-loss dielectric to serve as a passivation and spacer layers for complex fabrication processes.

This paper presents a path towards high-volume, low-cost transceivers that should revolutionize the datacom market by developing a simple, high-yield process for fabricating QD based single frequency lasers. The four big changes from the approach taken today are 1) Growth on Si, 2) MBE growth and MBE regrowth which is possible to be implemented at 300 mm wafer scale, 3) System demonstration without optical isolators and 4) demonstration of a path to PICs for Terabit transmitters.