1.3 µm quantum-dot distributed feedback lasers directly grown on (001) Si

Author(s)
Y. Wan, J. Norman, Y. Tong, MJ Kennedy, W. He, J. Selvidge, C. Shang, M. Dumont, A. Malik, H. K. Tsang, A. C. Gossard, and J. E. Bowers
Publication Date
Publication Type
Journal
Journal/Conference Name
Laser & Photonics Reviews

This paper presents a path towards high-volume, low-cost transceivers that should revolutionize the datacom market by developing a simple, high-yield process for fabricating QD based single frequency lasers. The four big changes from the approach taken today are 1) Growth on Si, 2) MBE growth and MBE regrowth which is possible to be implemented at 300 mm wafer scale, 3) System demonstration without optical isolators and 4) demonstration of a path to PICs for Terabit transmitters.

Publication File
Research Areas
Silicon Photonics
More Research Areas
Epitaxial Growth on Si