| Intraband carrier kinetics and picosecond pulse shaping in field-enhanced semiconductor absorbers |
A. V. Uskov, J. R. Karin, J. E. Bowers, J. McInerney |
Optics Letters |
vol. 23, no. 5, pp. 376-378 |
March 1, 1998 |
uskov98ol.pdf273 KB |
| Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence |
M. S. Minsky, S. B. Fleischer, A. C. Abare, J. E. Bowers, E. L. Hu, S. Keller, S. P. Denbaars |
Applied Physics Letters |
vol. 72, no. 9, pp. 1066-1068 |
March 1, 1998 |
minsky98apl.pdf68.3 KB |
| Characterization of InGaAs quantum dot lasers with a single quantum dot layer as an active region |
R. Mirin, A. Gossard and J. E. Bowers |
Elsevier Science B.V. Physica E Low-Dimensional Systems and |
pp. 738-742 |
January 1, 1998 |
1998 mirin gossard bowers single quantum dot layer.pdf105.17 KB |
| Ultrafast Transport Dynamics of p-i-n Photodetectors Under High Power Illumination |
C.-K. Sun, I.H. Tan, J.E.Bowers |
IEEE Photonics Technology Letters |
vol. 10, no. 1, pp. 135-137 |
January 1, 1998 |
sun98ptl.pdf40 KB |
| Thermoelectric Effects in Submicron Heterostructure Barriers |
A. Shakouri, E. Y. Lee, D.L. Smith, V. Narayanamurti and J. E. Bowers |
Microscale Thermophysical Engineering |
pp. 37-47 |
January 1, 1998 |
shakouri98mte.pdf460 KB |
| Ultrafast (370 GHz bandwidth) p-i-n traveling wave photodetector using low-temperature-grown GaAs |
Y.-J. Chiu, S. B. Fleischer, D. Lasaosa, J. E. Bowers |
Applied Physics Letters |
vol. 71, no. 17, pp. 2508-2510 |
October 1, 1997 |
chiu97apl.pdf454 KB |
| Heterostructure integrated thermionic coolers |
A. Shakouri, J. E. Bowers |
Applied Physics Letters |
vol. 71, no. 9, pp. 1234-1236 |
September 1, 1997 |
shakouri97apl.pdf81 KB |
| Design of Silicon Hetero-Interface Photodetectors |
W. Wu, A. Hawkins and J. E. Bowers |
Journal of Lightwave Technology |
15(8), 1608-1615 |
August 1, 1997 |
wu97jlt.pdf231.64 KB |
| Wafer Fusion: Materials Issues and Device Results |
A. Black, A. R. Hawkins, N. M. Margalit, D. I. Babic, A. L. Holmes, Jr., Y.-L. Chang, P. Abraham, J. E. Bowers and E. L. Hu |
IEEE Journal of Selected Topics in Quantum Electronics |
3(3), 943-951 |
June 1, 1997 |
black97jqe.pdf198.03 KB |
| 20 GHz High Performance Si/InGaAs PIN Photodetector |
B. F. Levine, A. R. Hawkins, S. Hiu, B. J. Tseng, C. A. King, L. A. Gruezke, R. W. Johnson, D. R. Zolnowski, and J. E. Bowers |
Applied Physics Letters |
70(18), 2449-2451 |
May 1, 1997 |
levine97apl.pdf90.92 KB |