Directly modulated 1.3 μm quantum dot lasers epitaxially grown on silicon	D. Inoue, D. Jung, J. Norman, Y. Wan, N. Nishiyama, S. Arai, A. C. Gossard, and J. E. Bowers	Optics ExpressVol. 26, No. 6, 7022-7033	March 7, 2018	inoue18oe.pdf4.1 MB
Silicon arrayed waveguide gratings at 2.0-μm wavelength characterized with an on-chip resonator	E. J. Stanton, N. Volet, and J. E. Bowers	Optics LettersVol. 43, No. 5, pages 1135-1138	February 28, 2018	stanton18ol.pdf1.79 MB
Strain-Compensated InGaAsP Superlattices for Defect Reduction of InP Grown on Exact-Oriented (001) Patterned Si Substrates by Metal Organic Chemical Vapor Deposition	L. Megalini, S. T. Š. Brunelli, W. O. Charles, A. Taylor, B. Isaac, J. E. Bowers, and J. Klamkin	Materials11, 337	February 26, 2018	megalini18m_reduced.pdf1.12 MB
Status and Potential of Lithium Niobate on Insulator (LNOI) for Photonic Integrated Circuits	A. Boes, B. Corcoran, L. Chang, J. Bowers, and A. Mitchell	Laser & Photonics Reviews1700256	February 23, 2018	boes18lpr.pdf2.7 MB
Piezoelectrically tuned silicon nitride ring resonator	W. Jin, R. G. Polcawich, P. A. Morton, and J. E. Bowers	Optics ExpressVol. 26, Issue 3, pp. 3174-3187	February 5, 2018	oe-26-3-3174.pdf9.13 MB
(Al)GaInP/GaAs Tandem Solar Cells for Power Conversion at Elevated Temperature and High Concentration	E. E. Perl, J. Simon, D. J. Friedman, N. Jain, P. Sharps, C. McPheeters, Y. Sun, M. L. Lee, and M. A. Steiner	Journal of Photovoltaicsvol. 8, no. 2, pp. 640-645	January 12, 2018	(Al)GaInP-GaAs Tandem Solar Cells For Power Conversion at Elevated Temperature and High Concentration.pdf2.38 MB
High-brightness lasers with spectral beam combining on silicon	E. J. Stanton		January 9, 2018	EJS_thesis.pdf20.76 MB
Low-Loss Continuously Tunable Optical True Time Delay Based on Si3N4 Ring Resonators	C. Xiang, M. L. Davenport, J. B. Khurgin, P. A. Morton and J. E. Bowers	IEEE Journal of Selected Topics in Quantum ElectronicsVol 24, No 4, 5900109	December 21, 2017	chao17jstqe.pdf945.73 KB
Identification of the limiting factors for high-temperature GaAs, GaInP, and AlGaInP solar cells from device and carrier lifetime analysis	E. E. Perl, D. Kuciauskas, J. Simon, D. J. Friedman, and M. A. Steiner	Journal of Applied Physicsvol. 102, pp. 233102	December 19, 2017	Identification of the limiting factors for high-temperature GaAs, GaInP, and AlGaInP solar cells from device and carrier lifetime analysis.pdf3.31 MB
Highly reliable low threshold InAs quantum dot lasers on on-axis (001) Si with 87% injection efficiency	D. Jung, Z. Zhang, J. Norman, R. Herrick, MJ Kennedy, P. Patel, K. Turnlund, C. Jan, Y. Wan, A. Gossard, and J. E. Bowers	ACS PhotonicsVol 5, No 3, 1094-1100	December 18, 2017	jung17acs.pdf948.61 KB