| Low-Threshold Continuous-Wave Operation of Electrically-Pumped 1.55 μm InAs Quantum Dash Microring Lasers |
Y. Wan, D. Jung, C. Shang, N. Collins, I. MacFarlane, J. Norman, M. Dumont, A. C. Gossard, and J. E. Bowers |
ACS Photonicshttp://dx.doi.org/10.1021/acsphotonics.8b01341 |
December 26, 2018 |
wan18acs_reduced.pdf676.89 KB |
| High efficiency SHG in heterogenous integrated GaAs ring resonators |
L. Chang, A. Boes, P. Pintus, J. D. Peters, MJ. Kennedy, X. Guo, N. Volet, S. Yu, S. A. Diddams, S. B. Papp, and J. E. Bowers |
IEEE Photonics Conference 2018Reston, Virginia |
November 30, 2018 |
chang18ipc.pdf840.53 KB |
| Analysis of the optical feedback dynamics in InAs/GaAs quantum dot lasers directly grown on silicon |
H. Huang, J. Duan, D. Jung, A. Liu, Z. Zhang, J. Norman, J. E. Bowers, and F. Grillot |
Journal of the Optical Society of America BVol 35, No 11, 2780-2787 |
October 12, 2018 |
huang18josab_reduced-compressed.pdf429.31 KB |
| Heterogeneously Integrated GaAs Waveguides on Insulator for Efficient Frequency Conversion |
L. Chang, A. Boes, X. Guo, D. T. Spencer, M. J. Kennedy, J. D. Peters, N. Volet, J. Chiles, A. Kowligy, N. Nader, D. D. Hickstein, E. J. Stanton, S. A. Diddams, S. B. Papp, and J. E. Bowers |
Laser & Photonics ReviewsArticle number 1800149 |
October 10, 2018 |
chang18lpr.pdf656.87 KB |
| Degradation mechanisms of heterogeneous III-V/Silicon loop-mirror laser diodes for photonic integrated circuits |
743. M. Buffolo, M. Pietrobon, C. De Santi, F. Samparisi, M. L. Davenport, J. E. Bowers, G. Meneghesso, E. Zanoni, and M. Meneghini |
Microelectronics Reliability88-90, 855-858 |
September 30, 2018 |
buffolo18mr.pdf829.44 KB |
| Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si |
D. Inoue, Y. Wan, D. Jung, J. Norman, C. Shang, N. Nishiyama, S. Arai, A. C. Gossard, and J. E. Bowers |
Applied Physics Letters113, 093506 |
August 30, 2018 |
inoue18apl.pdf1.76 MB |
| Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si |
D. Inoue, Y. Wan, D. Jung, J. Norman, C. Shang, N. Nishiyama, S. Arai, A. C. Gossard, and J. E. Bowers |
Applied Physics Letter |
August 30, 2018 |
Low-dark current 10 Gbits operation of InAs InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP Si.pdf1.76 MB |
| Photonic Integrated Circuits Using Heterogeneous Integration on Silicon |
T. Komljenovic, D. Huang, P. Pintus, M. A. Tran, M. L. Davenport, and J. E. Bowers |
Proceedings of the IEEEVol 106, No 12, 2246-2257 |
August 30, 2018 |
komljenovic18ip_reduced.pdf973.76 KB |
| Interband cascade laser on silicon |
A. Spott, E. J. Stanton, A. Torres, M. L. Davenport, C. L. Canedy, I. Vurgaftman, M. Kim, C. S. Kim, C. D. Merritt, W. W. Bewley, J. R. Meyer, and J. E. Bowers |
OpticaVol 5, No 8, 996-1005 |
August 16, 2018 |
spott18o_reduced.pdf1.01 MB |
| Intensity and Phase Modulators at 1.55 μm in GaAs/AlGaAs Layers Directly Grown on Silicon |
P. Bhasker, J. Norman, J. Bowers, and N. Dagli |
Journal of Lightwave Technology113, 093506 |
August 16, 2018 |
bhasker18jlt_reduced.pdf306.09 KB |