Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si

D. Inoue, Y. Wan, D. Jung, J. Norman, C. Shang, N. Nishiyama, S. Arai, A. C. Gossard, and J. E. Bowers
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Wavelength dependence of responsivity measured with various bias voltage conditions.
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Journal/Conference Name
Applied Physics Letters
113, 093506

We demonstrate 10 Gbit/s operation of InAs/InGaAs quantum dot (QD) p-i-n photodiodes (PDs) grown on on-axis (001) GaP/Si substrates. A 3.0 50 lm2 QD PD shows a small dark current of 0.2 nA at a bias voltage of 3 V, which corresponds to a dark current density of 0.13 mA/cm2 . This low-dark current characteristic obtained from a narrow-stripe device indicates that sidewall and threading dislocations have small effects on the dark current. The 3 dB bandwidth was 5.5 GHz at a bias voltage of 5 V. Large signal measurement with non-return-to-zero signals shows 10 Gbit/s eye opening.

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Research Areas
Silicon Photonics