Hertz-level-linewidth semiconductor laser via injection locking to an ultra-high Q silicon nitride microresonator

W. Jin, , Q. Yang, , L. Chang, B. Shen, H. Wang , M. A. Leal, L. Wu, M. Gao, A. Feshali , M. Paniccia , K. J. Vahala, J. E. Bowers
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Ring resonator thumbnail
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CLEO: Science and Innovations

A conventional semiconductor DFB laser is self-injection-locked to a CMOS-foundryfabricated ultra-high Q silicon nitride microresonator, suppressing high-offset frequency noise to 0.2 Hz2 Hz-1 and yielding instantaneous linewidth of 1.2 Hz.

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Research Areas
Photonics Integrated Circuits