Title Author(s) Journal Indexing Publication Date Publication File
Heterogeneously Integrated GaAs Waveguides on Insulator for Efficient Frequency Conversion L. Chang, A. Boes, X. Guo, D. T. Spencer, M. J. Kennedy, J. D. Peters, N. Volet, J. Chiles, A. Kowligy, N. Nader, D. D. Hickstein, E. J. Stanton, S. A. Diddams, S. B. Papp, and J. E. Bowers Laser & Photonics Reviews Article number 1800149 October 10, 2018 chang18lpr.pdf656.87 KB
Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si D. Inoue, Y. Wan, D. Jung, J. Norman, C. Shang, N. Nishiyama, S. Arai, A. C. Gossard, and J. E. Bowers Applied Physics Letter August 30, 2018 Low-dark current 10 Gbits operation of InAs InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP Si.pdf1.76 MB
Towards heterogeneous integration of optical isolators and circulators with lasers on silicon [Invited] D. Huang, P. Pintus, and J. E. Bowers Optical Materials Express Vol 8, No 9, page 2471-2483 August 9, 2018 huang18ome.pdf4.38 MB
Ultra-Low-Loss Silicon Waveguides for Heterogeneously Integrated Silicon/III-V Photonics M. A. Tran, D. Huang, T. Komljenovic, J. Peters, A. Malik and J. E. Bowers Applied Sciences 2018, 8(7), 1139 July 13, 2018 tran18ap.pdf5.17 MB
Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability Y. Wan, D. Inoue, D. Jung, J. C. Norman, C. Shang, A. C. Gossard, and J. E. Bowers Photonics Research Vol. 6, No. 8, pages 776-781 July 10, 2018 Link to paper1.35 MB
Photonic Integration With Epitaxial III–V on Silicon A. Y. Liu and J. Bowers IEEE Journal of Selected Topics in Quantum Electronics Volume 24, Issue 6, 6000412 July 9, 2018 liu18jstqe.pdf1.5 MB
Effect of phonon confinement on the thermal conductivity of In0.53Ga0.47As nanofilms J. Kim, H. Kim, M. E. Kilic, C. Gayner, R. Koltun, H. Park, A. Soon, J. Bowers, C. Palmstrøm, and W. Kim Journal of Applied Physics Volume 123, Issue 24, 245103 June 25, 2018 kim18jap.pdf2.58 MB
Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor J. Duan, H. Huang, D. Jung, Z. Zhang, J. Norman, J. E. Bowers and F. Grillot Applied Physics Letters 112, 251111 (2018) June 21, 2018 duan18apl.pdf918.74 KB
Effect of growth interruption in 1.55 μm InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy D. Jung, D. J. Ironside, S. R. Bank, A. C. Gossard, and J. E. Bowers Journal of Applied Physics Volume 123, Issue 20, 205302 May 23, 2018 jung18jap.pdf1.74 MB
An optical-frequency synthesizer using integrated photonics D. T. Spencer et al. Nature April 25, 2018 spencer13nature.pdf8.22 MB