Journals

Title Author(s) Journal Indexing Publication Date Publication File
Micro-resonator soliton generated directly with a diode laser N. Volet, X. Yi, Q.-F. Yang, E. J. Stanton, P. A. Morton, K. Y. Yang, K. J. Vahala, and J. E. Bowers arXiv.org arXiv:1711.06307 November 16, 2017 volet17arxiv.pdf1.14 MB
Heterodyne-based hybrid controller for wide dynamic range optoelectronic frequency synthesis A. Bluestone, A. Jain, N. Volet, D. T. Spencer, S. B. Papp, S. A. Diddams, J. E. Bowers, and L. Theogarajan Optics Express Vol. 25, No. 23, pages 29086-29097 November 8, 2017 bluestone17oe.pdf4.38 MB
Large-Area Direct Hetero-Epitaxial Growth of 1550-nm InGaAsP Multi-Quantum-Well Structures on Patterned Exact-Oriented (001) Silicon Substrates by Metal Organic Chemical Vapor Deposition L. Megalini, B. C. Cabinian, H. Zhao, D. C. Oakley, J. E. Bowers, and J. Klamkin Journal of Electronic Materials https://doi.org/10.1007/s11664-017-5887-9 November 2, 2017 Large-Area Direct Hetero-Epitaxial Growth of 1550-nm InGaAsP Multi-Quantum-Well Structures on Patterned Exact-Oriented (001) Silicon Substrates by Metal Organic Chemical Vapor Deposition.pdf1.87 MB
Monolithically Integrated InAs/InGaAs Quantum Dot Photodetectors on Silicon Substrates Y. Wan, Z. Zhang, R. Chao, J. Norman, D. Jung, C. Shang, Q. Li, MJ. Kennedy, D. Liang, C. Zhang, J. Shi, A. C. Gossard, E. L. Hu, K. M. Lau, and J. E. Bowers Optics Express Volume 25, Number 22, 27715-27723 October 30, 2017 Monolithically Integrated InAsInGaAs Quantum Dot Photodetectors on Silicon Substrates.pdf7.67 MB
O-band electrically injected InAs quantum-dot micro-ring lasers on V-groove patterned and unpatterned (001) silicon Y. Wan, J. Norman, D. Jung, C. Shang, L. Macfarlane, Q. Li, MJ. Kennedy, Z. Zhang, A. C. Gossard, E. L. Hu, K. M. Lau, and J. E. Bowers Optics Express Volume 25, Number 22 26853-26860 October 30, 2017 O-band electrically injected quantum dot micro-ring lasers on on-axis (001) GaPSi and V-groove Si.pdf5.18 MB
Stable Arbitrary Frequency Generator T. Komljenovic, B. Szafraniec, D. Barney, and J. E. Bowers Journal of Lightwave Technology Volume 35, Issue 22, pages 4897-4902 October 26, 2017 komljenovic17jlt.pdf881.44 KB
1.3 µm submilliamp threshold quantum dot micro-lasers on Si Y. Wan, J. Norman, Q. Li, MJ. Kennedy, D. Liang, C. Zhang, D. Huang, Z. Zhang, A. Y. Liu, A. Torres, D. Jung, A. C. Gossard, E. L. Hu, K. M. Lau, and J. E. Bowers Optica volume 4, Number 8, 940-944 August 4, 2017 1.3 μm submilliamp threshold quantum dot micro-lasers on Si.pdf1.75 MB
Dynamic characteristics of 410 nm semipolar (202 ̅1 ̅) III-nitride laser diodes with a modulation bandwidth over 5 GHz C. Lee, C. Zhang, D. L. Becerra, S. Lee, S. H. Oh, R. M. Farrell, J. S. Speck, S. Nakamura, J. E. Bowers, and S. P. DenBaars Applied Physics Letters 109, 101104 August 1, 2017 Lee16apl.pdf1.59 MB
Compact Modeling for Silicon Photonic Heterogeneously Integrated Circuits Z. Zhang, R. Wu, Y. Wang, C. Zhang, E. Stanton, C. Schow, T. Cheng, J. Bowers Journal of Lightwave Technology Vol. 35, No. 14 July 15, 2017 zhang17jlt.pdf1.64 MB
Reflection sensitivity of 1.3 um quantum dot lasers epitaxially grown on silicon A. Liu, T. Komljenovic, M. Davenport, A. Gossard and J. Bowers Optics Express Vol. 25, No. 9, pp. 9535-9543 May 1, 2017 liu17oe.pdf4.57 MB