Journals

Title Author(s) Journal Indexing Publication Date Publication File
Carrier nonuniformity effects on the internal efficiency of multiquantum-well lasers J. Piprek, P. Abraham, and J. E. Bowers Applied Physics Letters vol. 74, no. 4, pp. 489-491 January 25, 1999 piprek99apl.pdf71 KB
Study of Temperature Effects on Loss Mechanisms in 1.55 µm Laser Diodes with InGaP Electron Stopper Layer P. Abraham, J. Piprek, S. P. DenBaars, and J. E. Bowers Semiconductor Science and Technology vol. 14, no. 5, pp. 419-424 January 1, 1999 abraham99sst.pdf224 KB
Fused InP-GaAs Vertical Coupler Filters B. Liu, A. Shakouri, P. Abraham, Y. J. Chiu, S. Zhang, J. E. Bowers IEEE Photonics Technology Letters vol. 11, no. 1, pp. 93 January 1, 1999 liu99ptl.pdf62.88 KB
High-Speed Lasers R. Nagarajan and J. E. Bowers Chapter in Semiconductor Lasers Vol 1 ed. by Eli Kapon, Academic Press, 177-290 January 1, 1999
Thermionic emission cooling in single barrier heterostructures A. Shakouri, C. LaBounty, J. Piprek, P. Abraham, J. E. Bowers Applied Physics Letters vol. 74, no. 1, pp. 88-89 January 1, 1999 shakouri99apl.pdf56.06 KB
Wafer-Fused Optoelectronics for Switching A. Shakouri, B. Liu, B.-G. Kim, P. Abraham, A. W. Jackson, A. C. Gossard, J. E. Bowers IEEE Journal of Lightwave Technology vol. 16, no. 12, pp. 2236 December 1, 1998 shakouri98jlt.pdf477 KB
Effects of Carrier Cooling and Carrier Heating in Saturation Dynamics and Pulse Propagation Through Bulk Semiconductor Absorbers A. V. Uskov, J. R. Karin, J. E. Bowers, J. G. McInerney, J. Le Bihan IEEE Journal of Quantum Electronics vol. 34, no. 11, pp. 2162-2171 November 1, 1998 uskov98jqe.pdf298 KB
Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, T. Sota Applied Physics Letters vol. 73, no. 14, pp. 2006-2008 October 5, 1998 chichibu98apl.pdf74.25 KB
Improved Extinction Ratio in Ultra Short Directional Couplers Using Asymmetric Structures B. Kim, A. Shakouri, B. Liu, J. E. Bowers Japanese Journal of Applied Physics vol. 37, no. 2, pp. L930-L932 August 1, 1998 kim98jjap.pdf158.1 KB
Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes S. Chichibu, D. A. Cohen, M. P. Mack, A. C. Abare, P. Kozodoy, M. Minsky, S. Fleischer, S. Keller, J. E. Bowers, U. K. Mishra, L. A. Coldren, D. R. Clarke, and S. P. DenBaars Applied Physics Letters vol. 73, no. 4, pp. 496-498 July 27, 1998 chichibu98apl2.pdf81 KB